j. , d ue. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB861 description ? high collector-emitter breakdown voltage- :v(br)ceo=-150v(min) ? wide area of safe operation ? complement to type 2sd1138 applications ? developed for low frequency power amplifier color tv vertical deflection output applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25'c collector power dissipation @ tc=25c junction temperature storage temperature range value -200 -150 -6 -2 -5 1.8 30 150 -45-150 unit v v v a a w c ?c . ,? 2 fir: 1 base ! 2 collector ^ 3 emitter " ' to-220c package , m * t ' a ^ b w ?*? v ??) x- j-^ft ,.\ h " . ~1 l k 1 i h cl i rr irtr g [?- j div a b c d f g k j k l q r s u v * mm min 15,50 9.90 4.20 0.70 3.40 4.98 2. 68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10,20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 --s *l* j n.i semi-c'nikluetors reserves the right to change test tonditions. parameter limits and package dimensions nithout notice. information furnished by nj semi-conductors is hclicved to he both accurate and reliable at the time ot'goiii;. to press. i louever. n.i semi-conductors assumes no responsibility for ;wv emu's or omissions discovered in its use. \i,l sciiii-condiictors encourajics customers in \erily that datasheets are ciirreiit before placing orders. quality semi-conductors
silicon pnp power transistor 2SB861 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) vbe(oii) icbo hpe-1 hpe-2 cob parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current dc current gain dc current gain output capacitance conditions lc= -50ma ; rbe" le=-5ma; lc= 0 lc= -500ma; ls= -50ma lc= -50ma ; vce= -4v vcb=-120v; ie=0 lc= -50ma ; vce= -4v lc= -500ma ;vce= -10v ie= 0; vcb=-100v;ftest= 1.0mhz min -150 -6 60 60 typ. 30 max -3.0 -1.0 -1 200 unit v v v v ma pf hpe-1 classifications b 60-120 c 100-200
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